elektronische bauelemente CZD1386 -5 a, -30 v pnp epitaxial silicon transistor 01-june-2002 rev. a page 1 of 2 description the CZD1386 is designed for low frequency applications. features z low v ce(sat) = -0.55v(typ.) (i c /i b = -4 a/ -0.1 a) z excellent dc current gain characteristics package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo -30 v collector to emitter voltage v ceo -20 v emitter to base voltage v ebo -6 v collector current i c -5 a *collector current (pulse) i c -10 a total power dissipation pc 20 w junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. typ. max. unit test conditions bvcbo -30 - - v i c =-50ua bvceo -20 - - v i c =-1ma bvebo -6 - - v i e =-50ua icbo - - -500 na v cb =-20v iebo - - -500 na v eb =-5v *vce(sat) - - -1 mv i c =-4a, i b =-0.1ma *h fe 82 - 580 v ce =-2v, i c =-0.5ma ft - 120 - mhz v ce =-6v, i e =50ma, f=30mhz cob - 60 - pf v cb =-20v, i e =0, f=1mhz * pulse test: pulse width Q 380 s, duty cycle Q 2% classification of h fe 1 rank p q r e range 82 - 180 120 - 270 180 - 390 370 - 580 millimete r millimete r ref. min. max. ref. min. max. a 6.40 6.80 g 0.50 0.70 b 5.20 5.50 h 2.20 2.40 c 6.80 7.20 j 0.45 0.55 d 2.40 3.00 k 0 0.15 e 2.30 ref. l 0.90 1.50 f 0.70 0.90 m 5.40 5.80 s 0.60 0.90 r 0.80 1.20
elektronische bauelemente CZD1386 -5 a, -30 v pnp epitaxial silicon transistor 01-june-2002 rev. a page 2 of 2 characteristic curves
|
